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| Transistor 2SA921 Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Complementary to 2SC1980 5.00.2 Unit: mm 4.00.2 q q High collector to emitter voltage VCEO. Low noise voltage NV. (Ta=25C) Ratings -120 -120 -5 -50 -20 250 150 -55 ~ +150 Unit V V V mA mA mW C C s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Noise voltage (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) fT NV Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -2mA IC = -20mA, IB = -2mA VCB = -5V, IE = 2mA, f = 200MHz VCE = -40V, IC = -1mA, GV = 80dB Rg = 100k, Function FLAT 200 150 -120 -120 -5 180 520 - 0.6 V MHz mV min typ max -100 -1 Unit nA A V V V *h FE Rank classification R 180 ~ 360 S 260 ~ 520 hFE Rank 1 Transistor PC -- Ta 500 -24 Ta=25C 450 -20 IB=-50A -40A -16 -35A -30A -12 -25A -20A -8 -15A -10A -4 -5A 0 0 40 80 120 160 200 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -50 25C Ta=75C -25C 2SA921 IC -- VCE -60 VCE=-5V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 Collector current IC (mA) 400 -45A -40 -30 -20 -10 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 IC/IB=10 1000 900 800 700 600 500 400 300 200 100 0 - 0.1 - 0.3 hFE -- IC 320 VCE=-5V fT -- IE VCB=-5V Ta=25C Forward current transfer ratio hFE Transition frequency fT (MHz) -10 -30 -100 280 240 200 160 120 80 40 0 0.1 Ta=75C 25C -25C - 0.3 - 0.1 25C Ta=75C -25C - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -100 -1 -3 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 120 IE=0 f=1MHz Ta=25C NV -- IC VCE=-10V GV=80dB Function=FLAT Collector output capacitance Cob (pF) 9 8 7 6 5 4 3 2 1 0 -1 100 Noise voltage NV (mV) 80 Rg=100k 60 22k 40 4.7k 20 -3 -10 -30 -100 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 Collector to base voltage VCB (V) Collector current IC (mA) 2 |
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